何红宇

2019年04月12日 18:08  点击:[]

姓名:何红宇

职称:副教授

研究方向:半导体器件物理,集成电路设计

Email: hongyuhe2018@yahoo.com

 

华中科技大学电子科学与技术专业本科毕业;华中科技大学微电子学与固体电子学专业硕士毕业;华南理工大学微电子学与固体电子学专业博士毕业;北京大学博士后。

[1] Hongyu He, et al, Analytical drain current model for amorphous InGaZnO thin-film transistors at different temperatures considering both deep and tail trap states, IEEE Transactions on Electron Devices, 2017, 64(9): 3654-3660

[2] Hongyu He, et al, Analytical drain current model for organic thin-film transistors at different temperatures considering both deep and tail trap states, IEEE Transactions on Electron Devices, 2016, 63(11): 4423-4431

[3] Hongyu He, et al, Above-threshold 1/f noise expression for amorphous InGaZnO thin-film transistors considering series resistance noise, IEEE Electron Device Letters, 2015, 36(10): 1056-1059

[4] Hongyu He, et al, 1/f noise expressions for amorphous InGaZnO TFTs considering mobility power-law parameter in above-threshold regime, IEEE Electron Device Letters, 2015, 36(2): 156-158

[5] Hongyu He, et al, Trapped-charge-effect-based above-threshold current expressions for amorphous silicon TFTs consistent with Pao-Sah model. IEEE Transactions on Electron Devices, 2014, 61(11): 3744-3750

[6] Hongyu He, et al, Polynomial-effective-channel-mobility-based above-threshold current model for undoped polycrystalline-silicon thin-film transistors consistent with Pao-Sah model, IEEE Transactions on Electron Devices, 2012, 59(11): 3130-3132

[7] Hongyu He, et al, Analytical expressions for doped polycrystalline silicon thin-film transistors in above-threshold regime consistent with Pao-Sah model considering trapped charge effect, IEEE Transactions on Electron Devices, 2011, 58(12): 4324-4332

[8] Hongyu He, et al, Analytical model of undoped polycrystalline silicon thin-film transistors consistent with Pao-Sah model, IEEE Transactions on Electron Devices, 2011, 58(4): 1102-1107

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